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BTS949 Datasheet Smart Lowside Power Switch

Manufacturer: Infineon Technologies AG

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Datasheet Details

Part number BTS949
Manufacturer Infineon Technologies AG
File Size 181.60 KB
Description Smart Lowside Power Switch
Datasheet download datasheet BTS949 Datasheet

General Description

+ LOAD NC Drain dv/dt limitation Current limitation Overvoltage protection M 2 3 1 IN 4 CC Overtemperature protection ESD R CC Overload protection Short circuit circuit Short protection protection Source 5 HITFET ® Semiconductor Group Page 1 02.12.1998 BTS 949 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection RCC = 0 Ω without RCC Continuous input current -0.2V ≤ V IN ≤ 10V 1) Symbol Value 60 15 50 Unit V VDS VDS(SC) I IN no limit | IIN | ≤ 2 mA VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation Tj T stg Ptot EAS - 40 ...

+150 - 55 ...

+150 240 6000 3000 °C W mJ V T C = 25 °C Unclamped single pulse inductive energy I D(ISO) = 19 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn.

Overview

HITFET®BTS 949 Smart Lowside Power Switch.

Key Features

  • Logic Level Input.
  • Input Protection (ESD).
  • Thermal Shutdown.
  • Overload protection.
  • Short circuit protection.
  • Overvoltage protection.
  • Current limitation.
  • Maximum current adjustable with external resistor.
  • Current sense.
  • Status feedback with external input resistor.
  • Analog driving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS.

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