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BFR380F
NPN Silicon RF Transistor Preliminary data
High current capability and low figure for
wide dynamic range application
Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz Low noise figure: 1.1 dB at 1.8 GHz
3 1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR380F
Maximum Ratings Parameter
Marking FCs
Pin Configuration 1=B 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value
Package TSFP-3
Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1)
TS 95°C
6 15 15 2 80 14 380 150 -65 ... 150 -65 ...
BFR380 Datasheet
