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MJE350 - Silicon PNP Power Transistor

General Description

Collector Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) DC Current Gain- : hFE = -100(Min) @ IC= -50mA Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA Complement to the NPN MJE340 Minimum Lot-to-Lot variations for robust device performan

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ IC= -50mA ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA ·Complement to the NPN MJE340 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -3 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature -0.