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MJE340 - Silicon NPN Power Transistor

General Description

Collector Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) DC Current Gain- : hFE = 100(Min) @ IC= 50mA Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA Complement to the PNP MJE350 Minimum Lot-to-Lot variations for robust device performance an

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) ·DC Current Gain- : hFE = 100(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA ·Complement to the PNP MJE350 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range VALUE UNIT 300 V 300 V 3 V 0.