KTA1962 - Silicon PNP Power Transistors

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) Good Linearity of hFE Complement to Type KTC5242 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audi

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Datasheet Details

Part number	KTA1962
Manufacturer	Inchange Semiconductor
File Size	205.08 KB
Description	Silicon PNP Power Transistors
Datasheet	KTA1962 Datasheet

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type KTC5242 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTA1962 isc website：www.iscsemi.