High Collector-Emitter Breakdown Voltage
VCEO= -180V(Min)
Complement to Type KTC4370A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU
Full PDF Text Transcription for KTA1659A (Reference)
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KTA1659A. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= -180V(Min) ·Complement to Type KTC4370A ·Minimum Lot-to-Lot variations for ro...
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in) ·Complement to Type KTC4370A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature -0.15 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ KTA1659A isc website： www.iscsemi.
KTA1659A Datasheet
