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ISCNH379P - N-Channel MOSFET Transistor

Datasheet Summary

Description

and solenoid drive.

Features

  • Drain Current : ID= 2A@ TC=25℃.
  • Drain Source Voltage : VDSS= 1000V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 10Ω(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number ISCNH379P
Manufacturer Inchange Semiconductor
File Size 288.69 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet ISCNH379P Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ISCNH379P FEATURES ·Drain Current : ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.0 A IDM Drain Current-Single Pluse 6.0 A PD Total Dissipation @TC=25℃ 95 W TJ Max.
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