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ISCNH363N - Silicon NPN Power Transistor

Datasheet Summary

Description

and solenoid drive.

Max.

Features

  • Drain Current : ID= 59A@ TC=25℃.
  • Drain Source Voltage : VDSS= 300V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 36mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number ISCNH363N
Manufacturer INCHANGE
File Size 272.18 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet ISCNH363N Datasheet
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isc N-Channel MOSFET Transistor ISCNH363N FEATURES ·Drain Current : ID= 59A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 36mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 59 A PD Total Dissipation @TC=25℃ 235 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.
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