IRF822FI
FEATURES
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Rugged Gate Oxide Technology
DESCRIPTION
- Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
500 ±20
ID Drain Current-Continuous
1.9 A
IDM Drain Current-Single Pluse
7.6 A
PD Total Dissipation @TC=25℃
35 W
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
MAX 2.5 80
UNIT ℃/W ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL...
