IRF821
FEATURES
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Rugged Gate Oxide Technology
DESCRIPTION
- Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
450 ±20
ID Drain Current-Continuous
2.5 A
IDM Drain Current-Single Pluse
8A
PD Total Dissipation @TC=25℃
50 W
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃ isc website：.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
MAX 2.5 80
UNIT ℃/W ℃/W isc website：.iscsemi.cn
2 isc & iscsemi is registered trademark
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