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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF647
·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Lower Leakage Current: 10mA (Max.) @ VDS = 250V
·DESCRITION ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
275 ±20
V V
ID Drain Current-Continuous
13 A
IDM Drain Current-Single Plused
52 A
PD Total Dissipation @TC=25℃
125 W
Tj Max.
IRF647 Datasheet
