• Part: IRF640
  • Description: N-Channel Enhancement Mode Power MOS Transistors
  • Category: Transistor
  • Manufacturer: Comset Semiconductors
  • Size: 156.04 KB
Download IRF640 Datasheet PDF
Comset Semiconductors
IRF640
FEATURE N channel in a plastic TO220 package. They are intended for use in high speed power switching, low voltage, relay drivers and general purpose switching applications. DC-DC & DC-AC converters for tele, industrial and lighting equipment. pliance to Ro HS. ABSOLUTE MAXIMUM RATINGS http://..net/ Symbol VDS IDS IDM IAR EAS EAR VGS RDS(on) PT t J tstg Ratings Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Single pulse ID = 18 A, VDD = 50 V, Tj = 25°C Avalanche Energy, Periodic Limited by Tjmax Gate-Source Voltage Drain-Source on Resistance Power Dissipation at Case Temperature TC= 25°C Operating Temperature Storage Temperature range Value 200 18 72 18 280 13 20 0.18 125 150 -55 to +150 Unit V A m J V Ω W °C THERMAL CHARACTERISTICS Symbol Rth JC Rth JA Ratings Thermal Resistance, junction-case Thermal Resistance, junction-ambient Value 1 62.5 Unit °C/W 1/3 09/11/2012 SET SEMICONDUCTORS...