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BUW40A - Silicon NPN Power Transistor

Download the BUW40A datasheet PDF. This datasheet also covers the BUW40 variant, as both devices belong to the same silicon npn power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BUW40 = 350V(Min)- BUW40A = 400V(Min)- BUW40B High Switching Speed High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage

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Note: The manufacturer provides a single datasheet file (BUW40_InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BUW40 = 350V(Min)- BUW40A = 400V(Min)- BUW40B ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUW40 450 VCEV Collector-Emitter Voltage VBE= -1.
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