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BUW41A - NPN Transistor

Download the BUW41A datasheet PDF. This datasheet also covers the BUW41 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BUW41 = 350V(Min)- BUW41A = 400V(Min)- BUW41B High Switching Speed High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage

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Note: The manufacturer provides a single datasheet file (BUW41-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BUW41 = 350V(Min)- BUW41A = 400V(Min)- BUW41B ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUW41 450 VCEV Collector-Emitter Voltage VBE= -1.
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