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BUV52 - Silicon NPN Power Transistor

Description

High Current Capability Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 4A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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isc Silicon NPN Power Transistor BUV52 DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 4A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage (VBE= -1.
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