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BUK456-60B - N-Channel MOSFET Transistor

Download the BUK456-60B datasheet PDF. This datasheet also covers the BUK456-60A variant, as both devices belong to the same n-channel mosfet transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Drain Source Voltage- : VDSS=60V(Min) Low RDS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching r

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Note: The manufacturer provides a single datasheet file (BUK456-60A-InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BUK456-60B PowerMOS transistor NXP
BUK456-60A PowerMOS transistor NXP
BUK456-60H PowerMOS transistor NXP
BUK456-1000B PowerMOS transistor NXP
BUK456-100A PowerMOS transistor NXP

Other Datasheets by Inchange Semiconductor

Part Number Description
BUK456-60A N-Channel MOSFET Transistor
BUK456-100A N-Channel MOSFET Transistor
BUK456-100B N-Channel MOSFET Transistor
BUK456-200A N-Channel MOSFET Transistor
BUK456-200B N-Channel MOSFET Transistor

Full PDF Text Transcription

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=60V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK456-60A ID Current-continuou s@ TC=25℃ BUK456-60B Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 60 V ±30 V 52 A 51 150 W 175 ℃ 175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
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