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BU607 - Silicon NPN Power Transistor

Description

High Voltage: VCEV= 330V(Min) Fast Switching Speed- : tf= 0.75μs(Max) Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages

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isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.
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