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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 550V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power supplies and deflection circuits
for color receivers and monitors
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage-VBE= 0
1350
V
VCEO Collector-Emitter Voltage
550
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
2
A
IBM
Base Current-Peak
4
A
IE
Emitter Current-Continuous
7
A
IEM
Emitter Current-Peak
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
12
A
100
W
150
BU603 Datasheet
