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BDX96 - Silicon PNP Power Transistor

Download the BDX96 datasheet PDF. This datasheet also covers the BDX92 variant, as both devices belong to the same silicon pnp power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Collector Current -IC= -10A Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min)- BDX92 -80V(Min)- BDX94 -100V(Min)- BDX96 Complement to Type BDX91/93/95 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use

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Note: The manufacturer provides a single datasheet file (BDX92_InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BDX96 Bipolar PNP Device Seme LAB
BDX91 Bipolar NPN Device Seme LAB
BDX92 Bipolar PNP Device Seme LAB
BDX93 Bipolar NPN Device Seme LAB
BDX94 Bipolar NPN Device Seme LAB

Other Datasheets by Inchange Semiconductor

Part Number Description
BDX91 Silicon NPN Power Transistor
BDX92 Silicon PNP Power Transistor
BDX93 Silicon NPN Power Transistor
BDX94 Silicon PNP Power Transistor
BDX95 Silicon NPN Power Transistor

Full PDF Text Transcription

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isc Silicon PNP Power Transistor BDX92/94/96 DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min)- BDX92 -80V(Min)- BDX94 -100V(Min)- BDX96 ·Complement to Type BDX91/93/95 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage BDX92 -60 BDX94 -80 V BDX96 -100 VCEO Collector-Emitter Voltage BDX92 -60 BDX94 -80 V BDX96 -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 90 W
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