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BDX91 - Silicon NPN Power Transistor

Description

Collector Current -IC= 10A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min)- BDX91 80V(Min)- BDX93 100V(Min)- BDX95 Complement to Type BDX92/94/96 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in g

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min)- BDX91 80V(Min)- BDX93 100V(Min)- BDX95 ·Complement to Type BDX92/94/96 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage BDX91 60 BDX93 80 BDX95 100 VCEO Collector-Emitter Voltage BDX91 60 BDX93 80 BDX95 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 ICM Collector Current-Peak 15 PC Collector Power Dissipation @ TC=25℃ 90 TJ Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNI
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