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BD546B - Silicon PNP Power Transistor

Download the BD546B datasheet PDF (BD546 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon pnp power transistor.

Description

Collector Current -IC= -15A Collector-Emitter Breakdown Voltage- : V(BR)CEO = -40V(Min)- BD546; -60V(Min)- BD546A -80V(Min)- BD546B; -100V(Min)- BD546C Complement to Type BD545/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD546-InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Inchange Semiconductor
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  • BD546A - Silicon PNP Power Transistor
  • BD546C - Silicon PNP Power Transistor
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  • BD544A - Silicon PNP Power Transistors
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Full PDF Text Transcription

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isc Silicon PNP Power Transistor BD546/A/B/C DESCRIPTION ·Collector Current -IC= -15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -40V(Min)- BD546; -60V(Min)- BD546A -80V(Min)- BD546B; -100V(Min)- BD546C ·Complement to Type BD545/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD546 -40 BD546A -60 VCBO Collector-Base Voltage V BD546B -80 BD546C -100 BD546 -40 VCEO Collector-Emitter Voltage BD546A -60 V BD546B -80 BD546C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @
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