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3DD102B - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) DC Current Gain- : hFE= 20(Min.)@IC= 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS

power supply applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD102B DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS ·Designed for power amplifier,DC-DC converter and regulated power supply applications.