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2SCR586D - Silicon NPN Power Transistor

Description

Suitable for middle power drivers Low VCE(sat) VCE(sat)≤0.3V@(IC=2A,IB=100mA) Complementary NPN types:2SAR586D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMU

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isc Silicon NPN Power Transistor DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤0.3V@(IC=2A,IB=100mA) ·Complementary NPN types:2SAR586D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SCR586D isc website：www.iscsemi.
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