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2SCR542D - Silicon NPN Power Transistors

Description

DC Current Gain hFE :200-500@ IC= 0.5A Collector-Emitter Breakdown Voltage : V(BR) CEO= 30V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain hFE :200-500@ IC= 0.5A ·Collector-Emitter Breakdown Voltage : V(BR) CEO= 30V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current-Continuous 5.
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