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2SB975 - Silicon PNP Darlington Power Transistor

Description

High DC Current Gain- : hFE = 2000(Min)@ IC= -3A Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A Complement to Type 2SD1309 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency

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INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB975 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD1309 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low-speed switching industrial use.
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