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2SB955 - Silicon PNP Power Transistor

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -5A Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -5A Complement to Type 2SD1126 Minimum Lot-to-Lot variations for robust device performance and

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isc Silicon PNP Darlington Power Transistor 2SB955 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -5A ·Complement to Type 2SD1126 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
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