Datasheet4U Logo Datasheet4U.com

2SB953 - Silicon PNP Power Transistor

Description

Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max)@IC= -5A High Speed Switching Complement to Type 2SD1444 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for low-voltage switching applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB953 SILICON POWER TRANSISTOR SavantIC
2SB953 Power Transistors Panasonic Semiconductor
2SB953A SILICON POWER TRANSISTOR SavantIC
2SB953A Power Transistors Panasonic Semiconductor
2SB950 PNP Transistor Panasonic Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB950A Silicon PNP Power Transistor
2SB954 Silicon PNP Power Transistor
2SB954A Silicon PNP Power Transistor
2SB955 Silicon PNP Power Transistor
2SB900 Silicon PNP Power Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max)@IC= -5A ·High Speed Switching ·Complement to Type 2SD1444 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB953 isc website：www.iscsemi.
Published: |