IXYX120N120C3 - IGBT

This page provides the datasheet information for the IXYX120N120C3, a member of the IXYK120N120C3 IGBT family.

Features

z Optimized for Low Switching Losses z Square RBSOA z International Standard Packages z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement.

IXYS

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Datasheet Details

Part number	IXYX120N120C3
Manufacturer	IXYS
File Size	203.00 KB
Description	IGBT
Datasheet	IXYX120N120C3 Datasheet
Additional preview pages of the IXYX120N120C3 datasheet.

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Full PDF Text Transcription

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1200V XPTTM IGBTs GenX3TM High-Speed IGBTs for 20-50 kHz Switching Preliminary Technical Information IXYK120N120C3 IXYX120N120C3 VCES = IC110 = V ≤CE(sat) tfi(typ) = 1200V 120A 3.5V 90ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient 1200 1200 ±20 ±30 V V V V TC= 25°C (Chip Capability) Terminal Current Limit TC= 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load TC = 25°C 220 160 120 660 60 2 ICM = 240 ≤@VCE VCES 1500 -55 ... +175 175 -55 ... +175 A A A A A J A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.

Published: Jul 20, 2016 |