IXYX110N120A4 - Ultra Low-Vsat PT IGBT

Features

Optimized for Low Conduction Losses.
Positive Thermal Coefficient of Vce(sat).
International Standard Package Advantages.
High Power Density.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 3mA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1200 V 4.5 6.5 V.

IXYS

Datasheet Details

Part number	IXYX110N120A4
Manufacturer	IXYS
File Size	610.22 KB
Description	Ultra Low-Vsat PT IGBT
Datasheet	IXYX110N120A4 Datasheet
Additional preview pages of the IXYX110N120A4 datasheet.

📁 Similar Datasheet

IXYA20N120C3HV - 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYB82N120C3H1 - High-Speed IGBT (IXYS Corporation)
IXYH20N120C3 - 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYH50N120C3 - High-Speed IGBT (IXYS Corporation)
IXYH50N120C3D1 - High-Speed IGBT (IXYS Corporation)
IXYH82N120C3 - 1200V XPT IGBT (IXYS Corporation)
IXYP20N120C3 - 1200V XPT GenX3 IGBTs (IXYS Corporation)

Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text

1200V XPTTM IGBT GenX4TM Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYX110N120A4 VCES = 1200V IC110 = 110A V  1.80V CE(sat) tfi(typ) = 300ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC= 25°C (Chip Capability) Terminal Current Limit TC= 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque Maximum Ratings 1200 V 1200 V ±20 V ±30 V 375 A 160 A 110 A 900 A ICM = 220 A 0.8 • VCES V 1360 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 1.13/10 10 Nm/lb.

Published: Feb 10, 2025 |