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IXXX160N65C4 - 650V IGBT

Download the IXXX160N65C4 datasheet PDF. This datasheet also covers the IXXK160N65C4 variant, as both devices belong to the same 650v igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Optimized for 20-60kHz Switching z Square RBSOA z Short Circuit Capability z International Standard Packages z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement.

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Note: The manufacturer provides a single datasheet file (IXXK160N65C4-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXXX160N65B4 Extreme Light Punch Through IGBT
IXXX100N60B3H1 600V IGBT
IXXX100N60C3H1 600V IGBT
IXXX110N65B4H1 Extreme Light Punch Through IGBT
IXXX140N65B4H1 650V IGBT

Full PDF Text Transcription

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Preliminary Technical Information XPTTM 650V IGBTs GenX4TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXXK160N65C4 IXXX160N65C4 VCES = IC110 = V ≤ CE(sat) tfi(typ) = 650V 160A 2.1V 30ns TO-264 (IXXK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient Maximum Ratings 650 V 650 V ±20 V ±30 V TC= 25°C (Chip Capability) Leads Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive TC = 25°C 290 A 160 A 160 A 800 A ICM = 320 A ≤ @VCE VCES 10 μs 940 W -55 ... +175 °C 175 °C -55 ...
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