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IXXX110N65B4H1 - Extreme Light Punch Through IGBT

Download the IXXX110N65B4H1 datasheet PDF. This datasheet also covers the IXXK110N65B4H1 variant, as both devices belong to the same extreme light punch through igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • Optimized for 10-30kHz Switching.
  • Square RBSOA.
  • Short Circuit Capability.
  • Anti-Parallel Sonic Diode.
  • High Current Handling Capability.
  • International Standard Packages Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXXK110N65B4H1-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by IXYS (Littelfuse)

Part Number Description
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IXXX140N65B4H1 650V IGBT
IXXX160N65B4 Extreme Light Punch Through IGBT
IXXX160N65C4 650V IGBT

Full PDF Text Transcription

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XPTTM 650V GenX4TM IXXK110N65B4H1 w/ Sonic Diode IXXX110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V IC110 = 110A V CE(sat)  2.10V tfi(typ) = 43ns TO-264 (IXXK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient Maximum Ratings 650 V 650 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms 250 A 160 A 110 A 78 A 570 A VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 220 A  @VCE VCES VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 μs TC = 25°C 880 W -55 ... +175 °C 175 °C -55 ...
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