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IXXH75N60C3 - 600V IGBT

Features

  • z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Capability z Short Circuit Capability z International Standard Package Advantages z High Power Density z 175°C Rated z Extremely Rugged z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 60A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min.

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Preliminary Technical Information XPTTM 600V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60 kHz Switching IXXH75N60C3 VCES = IC110 = V ≤ CE(sat) tfi(typ) = 600V 75A 2.3V 75ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 22Ω, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.
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