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IXTY64N055T - Power MOSFET

Download the IXTY64N055T datasheet PDF. This datasheet also covers the IXTP64N055T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTP64N055T_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTY64N055T N-Channel MOSFET INCHANGE
IXTY01N100 Power MOSFET IXYS Corporation
IXTY01N100D N-Channel MOSFET IXYS Corporation
IXTY01N80 Power MOSFET IXYS Corporation
IXTY02N50D Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTY02N120P Power MOSFET
IXTY05N100 Power MOSFET
IXTY08N100D2 Power MOSFET
IXTY08N100P Power MOSFET
IXTY12N06T Power MOSFET

Full PDF Text Transcription

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Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP64N055T IXTY64N055T VDSS ID25 = = RDS(on) ≤ 55 V 64 A 13 mΩ TO-220 (IXTP) G D (TAB) D S Symbol V DSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Package Current Limit, RMS TO-252 TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 18 Ω TC = 25°C Maximum Ratings 55 55 ± 20 64 25 170 10 250 3 130 -55 ... +175 175 -55 ...
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