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IXTY12N06T - Power MOSFET

Download the IXTY12N06T datasheet PDF. This datasheet also covers the IXTU12N06T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTU12N06T-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXTY1R6N100D2 N-Channel MOSFET IXYS Corporation
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTY14N60X2 Power MOSFET
IXTY18P10T Power MOSFETs
IXTY1N100P Power MOSFET
IXTY1N80 High Voltage MOSFET
IXTY1N80P Power MOSFET

Full PDF Text Transcription

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Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU12N06T IXTY12N06T VDSS = ID25 = RDS(on) ≤ 60V 12A 85mΩ TO-251 (IXTU) Symbol VDSS VDGR VGSM ID25 IDM ILRMS IAR EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM Package Current Limit, RMS TO-252 TC = 25°C TC = 25°C TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Mounting torque TO-251 TO-252 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 25μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.
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