Datasheet4U Logo Datasheet4U.com

IXTY14N60X2 - Power MOSFET

Features

  • International Standard Package.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTY12N06T N-Channel MOSFET INCHANGE
IXTY1R4N100P N-Channel MOSFET INCHANGE
IXTY1R4N60P N-Channel MOSFET INCHANGE
IXTY1R6N100D2 N-Channel MOSFET IXYS Corporation
IXTY1R6N50D2 N-Channel MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTY12N06T Power MOSFET
IXTY18P10T Power MOSFETs
IXTY1N100P Power MOSFET
IXTY1N80 High Voltage MOSFET
IXTY1N80P Power MOSFET

Full PDF Text Transcription

Click to expand full text
X2-Class Power MOSFET N-Channel Enhancement Mode IXTY14N60X2 D G S Symbol V DSS VDGR VGSS V GSM ID25 I DM IA EAS dv/dt PD T J TJM Tstg TSOLD Weight Test Conditions T J = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C T C = 25C, Pulse Width Limited by T JM TC = 25C TC = 25C I S  I, DM V DD  V, DSS T J  150°C TC = 25C Plastic Body for 10s Maximum Ratings 600 V 600 V 30 V 40 V 14 A 18 A 7 A 150 mJ 15 V/ns 180 W -55 ... +150 C 150 C -55 ... +150 C 260 °C 0.35 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250µA V GS(th) V = V , I = 250µA DS GS D IGSS VGS = 30V, VDS = 0V I V = V , V = 0V DSS DS DSS GS TJ = 125C RDS(on) VGS = 10V, ID = 0.
Published: |