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PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS
VDSS = 600 V ID25 = 30 A RDS(on) ≤ 240 m Ω
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS
dv/dt
PD TJ TJM Tstg TL TSOLD FMCd Weight
Test Conditions
TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque Mounting force
(TO-3P, TO-247) (PLUS220)
TO-247 TO-3P PLUS220 TO-268
Maximum Ratings
600 V TO-247 (IXTH)
600 V
±30 V
±40 V 30 A
G DS
80 A TO-3P (IXTQ)
30 A
50 mJ 1.5 J
10 V/ns
G DS
540 W
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IXTT30N60P Datasheet
