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IXTP6N50P - Power MOSFET

Download the IXTP6N50P datasheet PDF. This datasheet also covers the IXTA6N50P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99447E(04/06) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS IXTA 6N50P IXTP 6N50P Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. VDS= 20 V; ID = 0.5 ID25, pulse test VGS = 0 V, VDS = 25.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA6N50P-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP6N50P N-Channel MOSFET INCHANGE
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IXTP60N20T N-Channel MOSFET INCHANGE
IXTP62N15P PolarHT Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTP6N100D2 N-Channel MOSFET
IXTP60N10T Power MOSFET
IXTP60N20T Power MOSFET
IXTP60N20X4 Power MOSFET
IXTP64N055T Power MOSFET

Full PDF Text Transcription

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PolarHVTM Power MOSFET IXTA 6N50P IXTP 6N50P N-Channel Enhancement Mode Avalanche Rated VDSS = 500 ID25 = 6 RDS(on) ≤ 1.1 V A Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 18 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-220) TO-220 TO-263 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 50µA IGSS VGS = ±30 V, VDS = 0V IDSS VDS = VDSS VGS = 0 V TJ = 125° C RDS(on) VGS = 10 V, ID = 0.
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