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IXTP62N15P - PolarHT Power MOSFET

Download the IXTP62N15P datasheet PDF. This datasheet also covers the IXTQ62N15P variant, as both devices belong to the same polarht power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150° C Characteristic Values Min. Typ. Max. 150 3.0 5.5 ±100 25 250 33 40 V V nA µA µA mΩ l l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTQ62N15P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 62N15P IXTP 62N15P IXTQ 62N15P VDSS ID25 RDS(on) = 150 V = 62 A ≤ 40 mΩ TO-263 (IXTA) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 10 Ω TC = 25° C Maximum Ratings 150 150 ±20 ±30 62 150 50 30 1.0 10 350 -55 ... +175 175 -55 ...
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