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IXTP120N075T2 - Power MOSFET

Download the IXTP120N075T2 datasheet PDF. This datasheet also covers the IXTA120N075T2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier 175°C Operating Temperature.
  • High Current Handling Capability.
  • ROHS Compliant.
  • High Performance Trench Technology for extremely low RDS(on) Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA120N075T2-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA120N075T2 IXTP120N075T2 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient 75 V 75 V 20 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 120 300 60 600 250 -55 ... +175 175 -55 ... +175 A A A mJ W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 2.5 g 3.
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