Datasheet4U Logo Datasheet4U.com

IXTP12N50P - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on) ≤ 0.5Ω@VGS=10V.
  • Fully characterized avalanche voltage and current.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP12N50P Power MOSFET IXYS
IXTP12N50PM Power MOSFET IXYS
IXTP12N65X2 Power MOSFET IXYS
IXTP12N65X2M Power MOSFET IXYS
IXTP12N70X2 Power MOSFET IXYS

Other Datasheets by Inchange Semiconductor

Part Number Description
IXTP12N50PM N-Channel MOSFET
IXTP12N65X2 N-Channel MOSFET
IXTP12N65X2M N-Channel MOSFET
IXTP12N70X2 N-Channel MOSFET
IXTP12N70X2M N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor IXTP12N50P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.
Published: |