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IXTL2N470 - High Voltage Power MOSFET

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4000V~ RMS Electrical Isolation.
  • Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription

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High Voltage Power MOSFET (Electrically Isolated Tab) Advance Technical Information IXTL2N470 VDSS I D25 RDS(on) = 4700V = 2A  20 N-Channel Enhancement Mode ISOPLUS i5-PakTM Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 4700 V 4700 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM 2 A 8 A TC = 25C 220 W - 55 ... +150 C 150 C - 55 ... +150 C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260 °C Mounting Force 20..120 / 4.5..27 N/lb. 50/60Hz, 1 Minute 4000 V~ 8 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max.
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