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IXTH4N150 - High Voltage Power MOSFET

Features

  • z International Standard Package z Fast Intrinsic Diode z Avalanche Rated z Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages z Easy to Mount z Space Savings z High Power Density.

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Full PDF Text Transcription

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High Voltage Power MOSFET IXTH4N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque Maximum Ratings 1500 V 1500 V ±30 V ±40 V 4 A 12 A 4 A 350 mJ 5 V/ns 280 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 260 1.13 / 10 6 °C °C Nm/lb.in.
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