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IXTH40N30 - Power MOSFET

Download the IXTH40N30 datasheet PDF. This datasheet also covers the IXTH35N30 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l International standard packages Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH35N30_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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www.DataSheet4U.com MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 N-Channel Enhancement Mode VDSS 300 V 300 V 300 V ID25 35 A 40 A 40 A RDS(on) 0.10 Ω 0.085 Ω 0.088 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 35N30 40N30 35N30 40N30 Maximum Ratings 300 300 ±20 ±30 35 40 140 160 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) D G = Gate, S = Source, G D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Features l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.
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