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PolarTM
Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
PLUS220 (IXTV)
IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P
PLUS220SMD (IXTV_S)
VDSS = 500V ID25 = 22A ≤RDS(on) 270mΩ trr(typ) = 400ns
TO-3P (IXTQ)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dV/dt
PD TJ TJM Tstg TL TSOLD Md FC Weight
G DS
D (TAB)
G S
D (TAB)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous Transient
Maximum Ratings 500 500 ± 30 ± 40
V
V
V V
TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
22 50 22 750
10 350 -55 ... +150
A A A mJ
V/ns W °C
150 °C
-55 ... +150
°C
Maximum Lead Temperature for Soldering Plastic Body for 10s
300 °C 260 °C
Mounting Torque (TO-247 & TO-3P)
1.
IXTH22N50P Datasheet
