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High Voltage MOSFET
N-Channel, Depletion Mode
IXTH20N50D IXTT20N50D
VDSX = ID25 = ≤RDS(on)
500V 20A 330mΩ
TO-268 (IXTT)
Symbol
VDSX VDGX
VGSX VGSM
ID25 IDM
PD
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings 500 500
V V
±30 V ±40 V
20 A 50 A
400 W
- 55 ... +150 150
- 55 ... +150
°C °C °C
300 °C 260 °C
1.13 / 10
Nm/lb.in.
IXTH20N50D Datasheet
