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IXTH1N450HV - High Voltage Power MOSFET

Download the IXTH1N450HV datasheet PDF. This datasheet also covers the IXTT1N450HV variant, as both devices belong to the same high voltage power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Blocking Voltage.
  • High Voltage Package Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV TJ = 100C RDS(on) VGS = 10V, ID = 50mA, Note 1 Characteristic Values Min. Typ. Max. 3.5 6.0 V 100 nA 5 A 25 μA 15 μA 80  Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTT1N450HV_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXTH1N100 N-Channel MOSFET INCHANGE
IXTH1N100 High-Voltage MOSFET IXYS Corporation
IXTH102N15T N-Channel MOSFET INCHANGE
IXTH102N20T N-Channel MOSFET INCHANGE
IXTH10N100 MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTH1N170DHV N-Channel MOSFET
IXTH1N200P3 High Voltage Power MOSFET
IXTH1N200P3HV High Voltage Power MOSFET
IXTH1N250 High Voltage Power MOSFET
IXTH1N300P3HV High Voltage Power MOSFET

Full PDF Text Transcription

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High Voltage Power MOSFET IXTT1N450HV IXTH1N450HV VDSS I D25 RDS(on) = 4500V = 1A  80 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 4500 V 4500 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM 1 A 3 A TC = 25C 520 W - 55 ... +150 C 150 C - 55 ... +150 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force (TO-263HV) Mounting Torque (TO-247HV) 10..65 / 22..14.6 1.13/10 N/lb Nm/lb.in TO-263HV TO-247HV 2.5 g 6.
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