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IXTH1N250 - High Voltage Power MOSFET

Features

  • z International Standard Package z Molding Epoxies Weet UL 94 V-0 Flammability Classification z Fast Intrinsic Diode z Low Package Inductance Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = 0.8.
  • VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5.
  • ID25, Note 1 Characteristic Values Min. Typ. Max. 2500 V 2.0 4.0 V ±100 nA 25 μA 25 μA 40 Ω Advant.

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Full PDF Text Transcription

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High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode IXTH1N250 VDSS = ID25 = RDS(on) ≤ 2500V 1.5A 40Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s Mounting Torque Maximum Ratings 2500 V 2500 V ±20 V ±30 V 1.5 A 6 A 250 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in.
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