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MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 14N80
VDSS = 800 V
ID25 = 14 A RDS(on) = 0.70 Ω
Symbol
Test Conditions
VDSS V
DGR
VGS VGSM
ID25 IDM
PD
TJ TJM Tstg
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MΩ
Continuous
Transient
TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C
Max. lead temperature for soldering 300 1.6 mm (0.063 in) from case for 10 s
Md Weight
Mounting torque
Maximum Ratings
800 800 ±20 ±30
14 56 300 -55 ... +150 150 -55 ... +150
V V V V A A W °C °C °C
°C
TO-247 AD
G = Gate, S = Source,
D (TAB)
D = Drain, TAB = Drain
1.13/10 Nm/lb.in.
IXTH14N80 Datasheet
