IXTH02N250 - High Voltage Power MOSFETs

This page provides the datasheet information for the IXTH02N250, a member of the IXTA02N250 High Voltage Power MOSFETs family.

Datasheet Summary

Features

z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings.

IXYS

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Datasheet Details

Part number	IXTH02N250
Manufacturer	IXYS
File Size	195.82 KB
Description	High Voltage Power MOSFETs
Datasheet	IXTH02N250 Datasheet
Additional preview pages of the IXTH02N250 datasheet.

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Full PDF Text Transcription

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High Voltage Power MOSFETs IXTH02N250 IXTV02N250S N-Channel Enhancement Mode Fast Intrinsic Diode VDSS = ID25 = ≤RDS(on) 2500V 200mA 450Ω TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) TO-247 PLUS220 Maximum Ratings 2500 2500 V V ±20 V ±30 V 200 mA 600 mA 83 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 1.13 / 10 11..65 / 25..14.6 °C °C Nm/lb.in N/lb.

Published: Jan 13, 2016 |