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IXTA460P2 - Power MOSFET

Features

  • z Avalanche Rated z Fast Intrinsic Diode z Dynamic dv/dt Rated z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings.

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PolarP2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXTA) IXTA460P2 IXTP460P2 IXTQ460P2 IXTH460P2 TO-220AB (IXTP) VDSS ID25 RDS(on) trr(typ) = = ≤ = 500V 24A 270mΩ 400ns TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight G S D (Tab) GD S D (Tab) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient Maximum Ratings 500 500 ± 30 ± 40 V V V V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 24 50 12 750 15 480 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W °C °C °C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260 °C Mounting Force TO-263 10..65 / 2.2..14.
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